TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
Representational AI photo Researchers from Taiwan’s National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin materials. They focuses on the tiny boundary where two materials meet, which allowed them to build transistors with an extremely thin insulating layer while maintaining strong … Read more
