TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
Comments Off on TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
August 12, 2026
Representational AI photo Researchers from Taiwan’s National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin materials. They focuses on the tiny boundary…